PART |
Description |
Maker |
BD682 BD682T |
Power 4A 100V PNPD
|
ON Semiconductor
|
MJF122-D MJF127 |
Complementary Power Darlingtons For Isolated Package Applications Power 5A 100V Darlington NPN Power 5A 100V PNP
|
ON Semiconductor
|
IRLI530G IRLI530GPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16惟 , ID=9.7A ) HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )
|
International Rectifier
|
IRHG7110 |
100V, 4 N-Channel Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安装抗辐射功率四N沟道MOSFET)
|
International Rectifier
|
IRF7452 IRF7452TR |
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A)
|
IRF[International Rectifier]
|
IRF9510S IRF9510STRL IRF9510STRR |
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-4.0A) Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A) Power MOSFET(Vdss=-100V/ Rds(on)=1.2ohm/ Id=-4.0A)
|
IRF[International Rectifier]
|
RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs 40A 100V 0.040 Ohm N-Channel Power MOSFETs From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.077ohm,身份证\u003d 28A条) Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A) Hexfet? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
|
IRF[International Rectifier]
|
IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.035ohm,身份证\u003d 18A POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*) THRU-HOLE (TO-257AA) 100V, N-CHANNEL 100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRF530 IRF530PBF |
14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A) Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
IRLU120N IRLU120NPBF IRLR120N IRLR120NPBF IRLR120N |
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.185ohm,身份证\u003d 10A条) 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
|