PART |
Description |
Maker |
2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2 |
NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB (2N6130 - 2N6134) NPN SILICON TRANSISTOR Leaded Power Transistor General Purpose Leaded Power Transistor Darlington
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http:// ON Semiconductor Central Semiconductor Corp. Advanced Semiconductor CENTRAL[Central Semiconductor Corp] Central Semiconductor C...
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UPA1478 UPA1478H UPA1478H-AZ |
2 A, 35 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR SIP-10 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
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Micrel Semiconductor, Inc. NEC[NEC]
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UPA1476 UPA1476H |
2 A, 115 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
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NEC Corp. NEC[NEC]
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FJPF13007H2TTU FJPF13007TU |
NPN Silicon Transistor 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB NPN Silicon Transistor; Package: TO-220F; No of Pins: 3; Container: Rail 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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Fairchild Semiconductor, Corp.
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
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NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
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ASI10740 VLB100-12 ASI10628 MLN1037F |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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ASI10627 MLN1033S ASI1002 ASI10523 ASI10527 ASI105 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
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ADVANCED SEMICONDUCTOR INC Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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ASI10650 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
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ADVANCED SEMICONDUCTOR INC Advanced Semiconductor, Inc.
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ASAT15 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator L BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc. http://
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BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
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