| PART |
Description |
Maker |
| EQ-432L |
EQ-432L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-433L |
EQ-433L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-431L |
EQ-431L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-730L |
EQ-730L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| LDM-0808-300M-91 |
CW Output Power: 300mW Typical 808 nm Emission Wavelength High-deeiciency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| LDM-0980-300M-92 |
CW Output Power: 300 mW Typical 975 nm Emission Wavelength High-effciency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| NX6411GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
California Eastern Labs
|
| NX6308GH NX6308GH-AZ |
1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
California Eastern Labs
|
| STK11C88-3 STK11C88-3N45 STK11C88-3N45I STK11C88-3 |
Quadruple 2-Input Exclusive-OR Gates 16-PDIP -40 to 85 32K的8非易失性SRAM 3.3伏量子端粒酶的CMOS非易失静态RAM
32K X 8 NVSRAM 3.3 V QUANTUM TRAP CMOS NONVOLATILE STATIC RAM
|
List of Unclassifed Manufacturers
Simtek
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
