| PART |
Description |
Maker |
| 2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368
FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
ISAHAYA[Isahaya Electronics Corporation]
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SC4135 2SA1593 2SC4135R 2SA1593R |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-252
High-Voltage Switching Applications
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 2A I(C) | TO-252
|
SANYO[Sanyo Semicon Device]
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| MBRB1090 MBRB10100 MBRF10100 MBR1090 MBRF1090 MBR1 |
High Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 10A
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| ZXTN19100CFFTA ZXTN19100CFF |
100V, SOT23F, NPN high gain power transistor
|
ZETEX[Zetex Semiconductors]
|
| CXTA44 |
SMD Small Signal Transistor NPN High Voltage
SURFACE MOUNT NPN SILICON HIGH VOLTAGE TRANSISTOR
|
Central Semiconductor Corp
|
| UPDS5100H |
5 Amp 100V High Voltage Schottky Barrier Rectifier
|
Microsemi
|
| 2SC4953 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 3 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Panasonic Industrial Solutions
PANASONIC[Panasonic Semiconductor]
|
| 2SC3148 |
3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
NPN TRIPLE DIFFUSED(for Switching Regulator and High Voltage)
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE, SWITCHING APPLICATIONS, HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4476 |
NPN Triple Diffused Planar Silicon Transistor 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
