| PART |
Description |
Maker |
| KVR16LSE11-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| KVR13N9S8-4 |
4GB 1Rx8 512M x 64-Bit PC3-10600
|
List of Unclassifed Man...
|
| KVR16LN11K2-8 |
8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.)
|
List of Unclassifed Man...
|
| HX316C10F-4 |
4GB 512M x 64-Bit DDR3-1600
|
List of Unclassifed Man...
|
| KVR667D2D4F5K2-8G |
8GB (4GB 512M x 72-Bit X 2 pcs.) PC2-5300
|
List of Unclassifed Man...
|
| TS512MUFM-V TS1GUFM-V TS2GUFM-V TS4GUFM-V |
512M~4GB USB Flash Module(Vertical)
|
Transcend Information. Inc.
|
| R11-0833 |
ADDR1600C4G11 DDR3L-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits)
|
A-Data Technology
|
| KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
| KVR16LE11-8 |
8GB 2Rx8 1G x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX25UM51245G |
1.8V 512M-BIT [x 1/x 8] CMOS MXSMIO
|
Macronix International
|
