PART |
Description |
Maker |
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLL6H0514L-130 BLL6H0514LS-130 |
LDMOS driver transistor BLL6H0514L-130<SOT1135A (CDFM2)|<<http://www.nxp.com/packages/SOT1135A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLS7G2325L-105 BLS7G2325L-105-15 |
Power LDMOS transistor BLS7G2325L-105<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor
|
NXP Semiconductors N.V.
|
MAPLST1617-030CF MAPLST1617-030CF-15 |
LDMOS RF Line Power FET Transistor LDMOS RF Line Power FET Transistor 30 W , 1600-1700 MHz, 28V
|
M/A-COM Technology Solu...
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
TMF8901F |
Si RF LDMOS Transistor
|
AUK[AUK corp]
|
LP701-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF8G22LS-270 |
Power LDMOS transistor
|
NXP Semiconductors
|
LX723-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLC8G24LS-240AV |
Power LDMOS transistor
|
NXP Semiconductors
|