| PART |
Description |
Maker |
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| BFS520 |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistor
|
Philips Semiconductors
NXP Semiconductors
|
| BFR106 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BFU580G |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU530W |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU660F |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU630F |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU550A-15 |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU610F |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU730LX-15 BFU730LX |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU520Y BFU520Y-15 |
Dual NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
