| PART |
Description |
Maker |
| AT45DB321C-CC AT45DB321C-RI AT45DB321C-CI AT45DB32 |
32 MEGABIT 2.7 VOLT DATAFLASH
TRANSI, NPN, 160V, 600MA, 2W, SOT223, CZT5551
DIODE/SM,REC*1A*60V 32M X 1 FLASH 2.7V PROM, PDSO28
|
Atmel Corp.
Atmel, Corp.
|
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| BFS520 |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistor
|
Philips Semiconductors
NXP Semiconductors
|
| BFU530W |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU550W |
NPN wideband silicon RF transistor
|
NXP Semiconductors
|
| BFU790F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU730F BFU730F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz)
|
TOSHIBA
|
| ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|
