PART |
Description |
Maker |
IXKH35N60C5 |
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
|
IXYS Corporation
|
STL34NF06 |
N-CHANNEL 60V 0.024 OHM 34A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩II MOSFET N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT LOW GATE CHARGE STripFETII MOSFET N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT LOW GATE CHARGE STripFET?II MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
STL28NF3LL |
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLATLOW GATE CHARGE STripFETMOSFET N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
SPB11N60S5 SPB11N60S505 |
New revolutionary high voltage technology Ultra low gate charge
|
http://
|
SPN01N60C3 SPN01N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
SPI16N50C3 SPP16N50C307 SPA16N50C3 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
SPP20N60C309 SPP20N60C3 SPI20N60C3 SPA20N60C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
SPP16N50C3-09 SPI16N50C3 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies A...
|
STB85NF3LL STB85NF3LLT4 |
N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFET⑩II POWER MOSFET N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFETII POWER MOSFET N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFET?II POWER MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IXFR12N100Q IXFR10N100Q |
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 10 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances 9 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp. IXYS[IXYS Corporation]
|