| PART |
Description |
Maker |
| ECG5699 ECG5683 ECG5687 ECG56019 ECG56015 |
TRIAC|800V V(DRM)|25A I(T)RMS|TO-220AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA 可控硅| 600V的五（DRM）的| 25A条口（T）的有效值|08AA
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 25A条口T）的有效值|20
|
ITT, Corp.
Advanced Interconnections, Corp.
|
| CQ220I-8 CQ220I-8D CQ220I-8M CQ220I-8N CQ220I-8B C |
Leaded Thyristor TRIAC
ISOLATED TAB TRIAC 8.0 AMP 200 THRU 800 VOLTS 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
ISOLATED TAB TRIAC 8.0 AMP 200 THRU 800 VOLTS 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220AB 400 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
ISOLATED TAB TRIAC 8.0 AMP 200 THRU 800 VOLTS 400 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220AB 200 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
TRIAC|800V V(DRM)|8A I(T)RMS|TO-220AB 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
ISOLATED TAB TRIAC 8.0 AMP 200 THRU 800 VOLTS 隔震统计表可控硅8.0放大00 7860 800伏特
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB 600 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| RCR150BX12 RCR150BX16 RCR150BX20 RCR150BX24 FR500A |
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|1.2KV V(DRM)|STF-M20
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR84 晶闸管|反向导电| 600V的五（DRM）的|00VAR84
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200VAR50
THYRISTOR|REVERSE-CONDUCTING|600V V(DRM)|TO-200AB
THYRISTOR|REVERSE-CONDUCTING|800V V(DRM)|TO-200VAR50
|
Rochester Electronics, LLC
|
| BT137B500T/R |
TRIAC|500V V(DRM)|8A I(T)RMS|SOT-404 可控硅| 500V五（DRM）的| 8A条口（T）的有效值|采用SOT - 404
|
Won-Top Electronics Co., Ltd.
|
| SSG25C100Y |
TRIAC|1KV V(DRM)|25A I(T)RMS|FBASE-R-HW30 可控硅| 1KV交五（DRM）的| 25A条口T）的有效值| FBASE受体- HW30
|
Won-Top Electronics Co., Ltd.
|
| CQ89N CQ89D CQ89M CQ89B |
2.0 AMP TRIAC 400 THRU 800 VOLTS
TRIAC|200V V(DRM)|1A I(T)RMS|SOT-89 可控硅| 200伏五（DRM）的| 1A条口T）的有效值|采用SOT - 89
|
Central Semiconductor C...
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Teridian Semiconductor, Corp.
|
| TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS
V(drm): 50V; 8A; glass passivated thyristor
V(drm): 1000V; 8A; glass passivated thyristor
V(drm): 100V; 8A; glass passivated thyristor
V(drm): 200V; 8A; glass passivated thyristor
V(drm): 400V; 8A; glass passivated thyristor
V(drm): 600V; 8A; glass passivated thyristor
V(drm): 800V; 8A; glass passivated thyristor
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| BTA212BSERIES BTA212_SERIES_B_1 BTA212-500B BTA212 |
Three quadrant triacs high commutation - I<sub>GT</sub>: 50 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 800 V; Package: SOT78 (TO-220AB); Container: Tube pack
TRIAC|500V V(DRM)|12A I(T)RMS|TO-220AB
From old datasheet system
|
NXP SEMICONDUCTORS
Philips
|
| NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A.
Silicon Controlled Rectifier for Phase Control Applications
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
|
NTE[NTE Electronics]
|
| PT110 PT006 PT210 PT225 PT125 PT215 PT610 PT106-66 |
30V Single N-Channel HEXFET Power MOSFET in a D2Pak package; A IRL8113S with Standard Packaging
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7205 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF3305 with Lead Free Packaging
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB4321PBF with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1405ZS with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7473 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; Similar to IRF540ZS with Lead Free Packaging
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF9Z24N with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU8203 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ34NS with Standard Packaging
TRIAC|600V V(DRM)|6A I(T)RMS|TO-66
TRIAC|50V V(DRM)|25A I(T)RMS|TO-208VAR1/2
TRIAC|100V V(DRM)|2.5A I(T)RMS|TO-5
TRIAC|200V V(DRM)|15A I(T)RMS|TO-208VAR1/2
such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; Similar to IRF6644 qualified for use
such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.; A IRF6644 with Standard Tape and Reel
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFS4610 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR7811W with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL520NS with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR120N with Lead Free Packaging
TRIAC|50V V(DRM)|6A I(T)RMS|TO-5VAR
TRIAC|100V V(DRM)|6A I(T)RMS|TO-5VAR
TRIAC|600V V(DRM)|6A I(T)RMS|TO-5VAR
TRIAC|50V V(DRM)|3A I(T)RMS|TO-208VAR1/2
TRIAC|50V V(DRM)|3A I(T)RMS|PRESS-13
TRIAC|100V V(DRM)|3A I(T)RMS|TO-208VAR1/2
AC Relay; Output Device:MOSFET; Output Voltage Max:60VAC; Load Current Max:1A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Switch Function:SPST-NO RoHS Compliant: Yes
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7490 with Lead Free Packaging 可控硅| 200伏五（DRM）的| 6A条口（T）的有效值|VAR
Microelectronic Power IC HEXFET® Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V AC, 1.0A 可控硅| 400V五（DRM）的| 6A条口（T）的有效值|208VAR1 / 2
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS4710 with Standard Packaging
100V 1 Form A Photo Voltaic Relay in a mod. 8-pin DIP Package
|
Microsemi, Corp.
LG, Corp.
|
| TLC336A |
TRIAC,600V V(DRM),3A I(T)RMS,TO-221VAR
|
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