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S8865-64G-15 - Photodiode array combined with signal processing IC for X-ray detection

S8865-64G-15_8318615.PDF Datasheet


 Full text search : Photodiode array combined with signal processing IC for X-ray detection
 Product Description search : Photodiode array combined with signal processing IC for X-ray detection


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S8865-64G-15 Photodiode array combined with signal processing IC for X-ray detection
Hamamatsu Corporation
S4111-35Q S4111-16Q S4111-16R S4111-46Q S4114-35Q Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
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Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
Hamamatsu Photonics K.K.
 
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