| PART |
Description |
Maker |
| IDW40G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| MS20 |
MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor
|
AVX Corporation
|
| GVT72256A16 |
REVOLUTIONARY PINOUT 256K X 16
|
Galvantech
|
| GVT7364A16 7364A16S |
REVOLUTIONARY PINOUT 64K X 16
From old datasheet system
|
Galvantech
|
| XA3S200-4TQG144I XA3S400-4FGG456I XA3S200-4VQG100I |
XA3S200-4TQG144I FPGA, 480 CLBS, 200000 GATES, PQFP144
XA3S400-4FGG456I FPGA, 896 CLBS, 400000 GATES, PBGA456
AUTOMOTIVE FPGA, 480 CLBS, 200000 GATES, PQFP100
FPGA, 192 CLBS, 50000 GATES, PQFP100
Revolutionary 90-nanometer process technology
Revolutionary 90-nanometer process technology
|
Xilinx, Inc.
XILINX INC
|
| SPB11N60S5 SPB11N60S505 |
New revolutionary high voltage technology Ultra low gate charge
|
http://
|
| K6R1004C1A K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A- |
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SPB17N80C3 SPB17N80C307 |
CoolMOS庐 Power Transistor Features new revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPD02N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| KM641003B KM641003B-12 KM641003B-10 KM641003B-8 |
256KX4 BIT (WITH OE) HIGH SPEED STATIC RAM(5.0V OPERATING), REVOLUTIONARY PIN OUT
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SPB04N60S5 SPB04N60S507 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| IPW60R250CP |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
