| PART |
Description |
Maker |
| IDW20G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| MS20 |
MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor
|
AVX Corporation
|
| GVT72512A8 |
REVOLUTIONARY PINOUT 512K X 8
|
Galvantech
|
| SPW11N80C3 SPW11N80C3-11 |
New revolutionary high voltage technology
|
Infineon Technologies A...
|
| GVT73128A8 73128A8S |
REVOLUTIONARY PINOUT 128K X 8
From old datasheet system
|
Galvantech
|
| GVT73128A16 73128A16 |
REVOLUTIONARY PINOUT 128K X 16
From old datasheet system
|
Galvantech
|
| PDM31034SA10SO PDM31034SA10SOATY PDM31034SA10SOATR |
1 megabit 3.3V static RAM 128K x 8-bit revolutionary pinout
|
PARADIGM
|
| AS5C512K8ECJ-35/H AS5C512K8ECJ-17L/H AS5C512K8ECJ- |
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT 12k × 8的SRAM高速SRAM和革命引脚排
LED, GRN SMT, 1206
µP-Compatible 14-Bit CMOS DAC; Package: PLCC; No of Pins: 20; Temperature Range: Commercial
Circular Connector; No. of Contacts:37; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Pin; Circular Shell Style:Right Angle Plug; Insert Arrangement:28-21 RoHS Compliant: No
CAT5 STP BACKBONE CABLE STRAIGHT PIN, PLN-GRAY
512K x 8 SRAM - high speed with revolutionary pinout
|
Electronic Theatre Controls, Inc.
Austin Semiconductor
http://
|
| IS63C1024 |
128K x 8 High Speed CMOS Static RAM 5V Revolutionary Pinout
|
Integrated Silicon Solution
|
| SPD02N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP12N50C3 SPP12N50C309 SPA12N50C3 SPI12N50C3 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| K6R1004C1B K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B- |
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
