| PART |
Description |
Maker |
| BAS516 |
High Spee d Switching Diode
|
Chendahang Electronics ...
|
| BUX39 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| QM100DY-24 QM100DY-24K |
100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 2N6339 2N6340 |
High-Power NPN Silicon Transistor(25A200W20V（集电极-发射极），硅NPN大功率晶体管) 25 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Power NPN Silicon Transistor(25A00W40V（集电极-发射极），硅NPN大功率晶体管) 25 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| 2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| NTE29 NTE30 |
50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
Silicon Complementary Transistors High Power, High Current Switch
|
NTE[NTE Electronics]
|
| BUX82 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| UN100 |
NPN, high power transistor. For high power audio and linear applications. Power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Vceo = 100Vdc, Vcer = 100Vdc, Vcb = 200Vdc, Veb = 7Vcd, Ic = 15Adc, PD
|
USHA India LTD
|
| 2SA1843 2SA1843M 2SA1843L |
Silicon power transistor
PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|园区
|
NEC Corp.
|
