| PART |
Description |
Maker |
| AO3414 KO3414 |
VDS (V) = 20V ID= 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
| KO3416 |
VDS (V) = 20V ID = 6.5 A RDS(ON) 22mΩ (VGS = 4.5V) RDS(ON) 26mΩ (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| LS4D28-100-RN LS4D28-270-RN LS4D28-271-RN LS4D28-3 |
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.2 V, Enhancement Mode, 8L SOIC, EPAD Enabled 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 12 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.0 V, 8L PDIP, EPAD Enabled
Dual N-Channel EPAD Matched Pair MOSFET Array, Vgs= 0.4 V, Enhancement Mode, 8L PDIP, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L SOIC, EPAD Enabled
Quad N-Channel EPAD Matched Pair MOSFET Array, Vgs= 1.4 V, 16L PDIP, EPAD Enabled
|
http://
ICE Components, Inc.
ICE COMPONENTS INC
|
| 1N957B ON0020 1N958B 1N968B 1N965B 1N963B 1N961B |
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35灏??,10V榻?撼?靛?锛?????绾崇ǔ??????)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,12V齐纳电压，玻璃齐纳稳压二极管) 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,15]V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,20V齐纳电压，玻璃齐纳稳压二极管)
500 mW DO-35 Glass Zener Voltage Regulator Diode(500 mW DO-35封装,7.5V齐纳电压，玻璃齐纳稳压二极管)
From old datasheet system
|
ON Semiconductor
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPB100N03S2-03 SPP100N03S2-03 SPI100N03S2-03 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.3mOhm, 100A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.0mOhm, 100A, NL
|
INFINEON[Infineon Technologies AG]
|
| SI8405DB |
12-V P-Channel 1.8-V (G-S) MOSFET 12 - V P -通道.8 VGS）的MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| 2SK3367 |
Low on-resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 18 A)
|
TY Semiconductor Co., Ltd
|
| SI4403BDY SI4403BDY-T1 |
P-Channel 1.8-V (G-S) MOSFET P通道.8 VGS）的MOSFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
|
