| PART |
Description |
Maker |
| FGA15S125P |
1250V, 15A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| FGA15S125P |
1250 V, 15 A Shorted-anode IGBT
|
Fairchild Semiconductor
|
| FGH30S130P |
1300V, 30A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| FGA20S140P |
Shorted AnodeTM IGBT
|
Fairchild Semiconductor
|
| RJP1CS08DWA-80W0 RJP1CS08DWT RJP1CS08DWT-80X0 |
1250V - 200A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| 6MBI20GS-060 |
IGBT(600V 20A)
|
Fuji Electric
|
| FGA20N120FTD FGA20N120FTDTU |
1200V, 20A Trench IGBT
|
Fairchild Semiconductor
|
| NCE20ED135T |
1350V, 20A, Trench FS IGBT
|
Wuxi NCE Power Semicond...
|
| FGAF20N60SMD |
600V, 20A, Field Stop IGBT
|
Fairchild Semiconductor
|
| FGH20N60UFD |
600V, 20A Field Stop IGBT
|
Fairchild Semiconductor
|
