PART |
Description |
Maker |
BSS123 BSS123-T |
150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-channel TrenchMOS(TM) transistor Logic Level FET N-channel TrenchMOS TM transistor N-channel TrenchMOS transistor
|
Philips NXP Semiconductors
|
BUK9614-55A BUK9514-55A |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 35x25 mm; Packaging: Bulk TrenchMOS logic level FET TrenchMOS TM logic level FET TrenchMOS(tm) logic level FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PHP63NQ03LT PHB63NQ03LT PHD63NQ03LT |
TrenchMOS logic level FET 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET TrenchMOS(tm) logic level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PHB11N03LT PHB_PHD11N03LT_1 PHD11N03LT |
N-channel TrenchMOS transistor Logic level FET From old datasheet system N-channel TrenchMOS TM transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
|
PSMN005-55B PSMN005-55P |
N-channel logic level TrenchMOS(TM) transistor N-channel logic level TrenchMOS transistor(N沟道逻辑电平 TrenchMOS晶体
|
Philips NXP SEMICONDUCTORS
|
PHB55N03LT PHD55N03LT PHP55N03LT PHB55N03 |
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BUK9Y27-40B |
N-channel TrenchMOS logic level FET 34 A, 40 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
BUK9Y07-30B |
N-channel TrenchMOS logic level FET 75 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
BUK9Y19-75B |
N-channel TrenchMOS logic level FET 48.2 A, 75 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
PHK31NQ03LT |
N-channel TrenchMOS logic level FET
|
NXP Semiconductors
|
PSMN2R0-30YL |
N-channel TrenchMOS logic level FET
|
NXP Semiconductors
|