| PART |
Description |
Maker |
| BLM8G0710S-30PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-80PB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| MW5IC970GNBR1 MW5IC970NBR1 MW5IC970NBR108 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
Freescale Semiconductor, Inc
|
| PTMC210404MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
| Q68000-A8370 CGY50 CGY50E6327 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 Ω gain block)
From old datasheet system
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 ヘ gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
Broadband MMIC Amplifier
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 |
RF LDMOS Wideband Integrated Power Amplifiers
MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, In...
FREESCALE[Freescale Semiconductor, Inc]
Motorola
|
