PART |
Description |
Maker |
ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ 0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
PHT41435B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
AT-41486 AT-41486-BLK AT-41486-TR1 AT41486 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AMMC-6231 |
AMMC-6231 · 16-32 GHz Low Noise Amplifier 16?2 GHz Low Noise Amplifier
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
INA-30311 INA-30311-BLK INA-30311-TR1 INA-30311- |
1 GHz Low Noise Silicon MMIC Amplifier GT 14C 14#16 SKT PLUG 1 GHz的硅单片低噪声放大器
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
UPC2713T UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC
|
PE3240 PE3240EK 3240-11 3240-12 3240-00 |
2.2 GHz UltraCMOS⑩ Integer-N PLL for Low Phase Noise Applications 2.2 GHz UltraCMOSInteger-N PLL for Low Phase Noise Applications 2.2 GHz UltraCMOS Integer-N PLL for Low Phase Noise Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
TMT-4-0504 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|