
	Part Number	Hot Search : G8234811 LM324 HA14G 11R474C BT5401 KSR1010 MAB03063 B250R
	Product Description
	Full Text Search

STW9B12G - Thermally Enhanced Package Design

STW9B12G_8295370.PDF Datasheet

Part No.

STW9B12G

Description

Thermally Enhanced Package Design

File Size

601.96K / 24 Page

Maker

Seoul Semiconductor

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: STW9NA80

Maker: ST

Pack: TO-247

Stock: Reserved

Unit price for :

50: $1.29

100: $1.23

1000: $1.16

Email: oulindz@gmail.com

Homepage

http://www.seoulsemicon.com/

Download

[ STW9B12G Datasheet PDF Downlaod from IC-ON-LINE.CN

] :-)

Full text search : Thermally Enhanced Package Design

Related Part Number

PART	Description	Maker
STW9B12G	Thermally Enhanced Package Design	Seoul Semiconductor
PTFA091201E PTFA091201EV4R0 PTFA091201EV4R250 PTFA	Thermally-Enhanced High Power RF LDMOS FETs	Infineon Technologies A...
GTVA261701FA-15	Thermally-Enhanced High Power RF GaN HEMT	Infineon Technologies A...
PXAC182002FC PXAC182002FC-15	Thermally-Enhanced High Power RF LDMOS FET	Infineon Technologies A...
PTFA181001GL	Thermally-Enhanced High Power RF LDMOS FET	Infineon Technologies
PTFB210801FAV1R0XTMA1 PTFB210801FAV1R250 PTFB21080	Thermally-Enhanced High Power RF LDMOS FET	Infineon Technologies A...
PTVA047002EV-15	Thermally-Enhanced High Power RF LDMOS FET	Infineon Technologies A...
PTFA092213EL-15	Thermally-Enhanced High Power RF LDMOS FETs	Infineon Technologies A...
PTFA180701E PTFA180701F	Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz	Infineon Technologies AG
PTFA260851E PTFA260851F	Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz	Infineon Technologies AG
PTFA212002E	Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz	Infineon Technologies AG

Related keyword From Full Text Search System

STW9B12G interrupt	STW9B12G mount	STW9B12G Semiconductor	STW9B12G Cycle	STW9B12G ic在线
STW9B12G MUX HCSL	STW9B12G Command	STW9B12G pwm	STW9B12G channel	STW9B12G mitsubishi