| PART |
Description |
Maker |
| TC58BVG1S3HTAI0 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HTAI0 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG1S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M381L6423ETM-LC5 M368L3223ETM-CC5 M368L3223ETM-LC5 |
184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KVR533D2E4K2/1G |
1024MB 533MHz DDR2 ECC CL4 DIMM (Kit of 2) 1024MB33 ECC DDR2记忆CL4内存（包2
|
Vishay Intertechnology, Inc.
|
| M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| M381L6523BUM-LCC M368L2923BTM-CCC M368L2923BTM-LCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
|
SAMSUNG[Samsung semiconductor]
|
| KMM372F213CS KMM372F213CK KMM372F1600BK |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 1,600 × 72的DRAM内存ECC的使6Mx4KK的刷新，3.3
|
Samsung Semiconductor Co., Ltd.
|
| KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372V410CS KMM372V400CK KMM372V400CS KMM372V410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| SLN02G72F1BK1MT-CCRT SLN02G72F1BK1MT-DCRT |
2048MB DDR3L ?SDRAM ECC SO-UDIMM
|
List of Unclassifed Man...
|
| SLN04G72F1BB1SA-CCRT |
4GB DDR3L ?SDRAM ECC SO-UDIMM
|
List of Unclassifed Man...
|
