| PART |
Description |
Maker |
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| CY14E101J2-SXIT CY14B101J1-SXI CY14B101J1-SXIT CY1 |
1-Mbit (128 K 8) Serial (I<sup>2</sup>C) nvSRAM
1-Mbit (128 K 8) Serial (I-2C) nvSRAM
|
Cypress
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| AT52SC1283J AT52SC1283J-70CI AT52SC1283J-85CI AT52 |
128-Mbit Flash 32-Mbit/64-Mbit
|
Toshiba Semiconductor
ATMEL Corporation
|
| HYB39S128160CT HYB39S128800CT |
128-Mbit(4banks × 2MBit × 16) Synchronous DRAM(128M(4× 2M× 16)同步动态RAM)
128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4× 4M× 8)同步动态RAM) 128兆位banks ×Mb × 8）同步DRAM28M的（4 × 4分列位8）同步动态RAM）的
|
SIEMENS AG
|
| M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导
STMicroelectronics
ST Microelectronics
|
| M36W0R7050B0 M36W0R7050B0ZAQ M36W0R7050T0 M36W0R70 |
SPECIALTY MEMORY CIRCUIT, PBGA88
128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package
|
STMICROELECTRONICS
ST Microelectronics
|
| M27C1001-12XBTR M27C1001-12XFTR M27C1001-25XBTR M2 |
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM 1兆位128千位× 8）紫外线存储器和OTP存储
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM 1兆位28千位× 8）紫外线存储器和OTP存储
|
意法半导
STMicroelectronics N.V.
|
| M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| HYB39S128800CT-75 HYB39S128160CT-7.5 HYB39S128800C |
128-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
