| PART |
Description |
Maker |
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| SKD146-L100 SKD146_12-L100 SKD146_16-L100 SKD146/1 |
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 12; Ic (A): 0.075; Pc (W): 0.7; hFE: 100 to 200; fT (GHz) typ: 7.8; Cob (pF) max: 0.9; NF (dB) typ: 1; Package: MPAK
Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| TA020-040-42-38 |
2.0 ?4.0 GHz 38dBm Amplifiers
|
Transcom, Inc.
|
| ERA-5XSM |
Monolithic Amplifier 50OHM, Broadband, DC to 4 GHz
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| CFH77 Q62702-G117 |
GaAs HEMT For low noise front end amplifiers up to 20 GHz
|
INFINEON[Infineon Technologies AG]
|
| BFQ71 Q62702-F775 A0534 |
From old datasheet system
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F1189 BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
| BFQ82 |
NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
Siemens Semiconductor Group
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| AD8361 AD8361ARM AD8361ARM-REEL AD8361ARM-REEL7 AD |
LF to 2.5 GHz TruPwrDetector SPECIALTY ANALOG CIRCUIT, PDSO6
LF to 2.5 GHz TruPwrDetector 低频.5 GHz TruPwr⑩探测器
LF to 2.5 GHz TruPwr⑩ Detector
LF to 2.5 GHz TruPwr Detector
LF to 2.5 GHz TruPwr?/a> Detector
LF to 2.5 GHz TruPwr?Detector
|
Analog Devices, Inc.
AD[Analog Devices]
|
| ERA-5SM ERA-3SM ERA-50SM ERA-4 ERA-4SM ERA-4XSM ER |
MONOLITHIC AMPLIFIERS 50?BROADBAND DC to 8 GHz
MONOLITHIC AMPLIFIERS 50?/a> BROADBAND DC to 8 GHz
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
Surface Mount Monolithic Amplifier 50/ Broadband/ DC to 4 GHz
Monolithic Amplifier 50OHM/ Broadband/ DC to 4 GHz
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 5, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 5, Max Output Current(A): 10, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 24, Max Output Current(A): 2.5, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 15, Max Output Current(A): 4, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 75 Watt Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 6.25, Package: Enclosed, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%,Single Outputs
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MINI[Mini-Circuits]
|
