| PART |
Description |
Maker |
| TA060-120-45-30 |
6.0 ?12.0 GHz 30dBm Amplifiers
|
Transcom, Inc.
|
| RFSP2020 PRFS-P2020-005 PRFS-P2020-006 PRFS-P2020- |
The RFS P2020 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
Single-band power amplifiers
2.4-2.5 GHz Power Amplifier
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| TA020-060-40-35 |
2.0 . 6.0 GHz 35dBm Amplifiers
|
Transcom, Inc.
|
| AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
AD[Analog Devices]
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz - 2.7 GHz RF Gain Blocks Silicon Bipolar Amplifiers
|
Analog Devices
|
| CFH77 Q62702-G117 |
GaAs HEMT For low noise front end amplifiers up to 20 GHz
|
INFINEON[Infineon Technologies AG]
|
| Q62702-F788 A0536 BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)
From old datasheet system
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range and broadband analog and digital applications)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HMC551LP4 HMC551LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.8 - 1.2 GHz
Analog & Mixed-Signal Processing -> Amplifiers
|
Hittite Microwave Corporation
|
| Q62702-F776 A0535 BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFQ82 |
NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
Siemens Semiconductor Group
|
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
