| PART |
Description |
Maker |
| TA020-060-22-13 |
2 ~ 6GHz 22dB Gain 13dBm Power Amplifier
|
Transcom, Inc.
|
| TA020-060-30-27 |
2 ~ 6GHz 30dB Gain 27dBm Power Amplifier
|
Transcom, Inc.
|
| LX5506B LX5506BLQ |
InGaP HBT 4 6GHz Power Amplifier
From old datasheet system
InGaP HBT 4 6GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| TPD04-0.5G06BS |
0.5-6GHz 4-Way Power Divider
|
Transcom, Inc.
|
| LTC5587 |
6GHz RMS Power Detector
|
Linear Technology
|
| LX5506M |
InGaP HBT 4.5 - 6GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| TGA2576-FS TGA2576-FS-15 |
2.5 to 6GHz 40W GaN Power Amplifier
|
TriQuint Semiconductor
|
| EPA240D-SOT89 |
DC-6GHz High Efficiency Heterojunction Power FET
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Eon Silicon Solution
|
| MAX9930EUAT MAX9932EUAT MAX9933EUAT MAX9931EUAT MA |
2MHz to 1.6GHz 45dB RF-Detecting Controllers and RF Detector 2 MHz - 1600 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Maxim Integrated Products
|
| 74LS240 SN74LS240 SN74LS244DW SN74LS240DW SN74LS24 |
5V High Linearity LNA, 39dBm OIP3, 0.45-6GHz, SOT343(SC-70) LS SERIES, DUAL 4-BIT DRIVER, INVERTED OUTPUT, PDSO20
LOW POWER SCHOTTKY
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| MGFC39V3436 C393436 |
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SMCJ6.0C SMCJ58CA SMCJ26CA SMCJ75CA SMCJ60C SMCJ16 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
GT 7C 7#12 SKT RECP WALL
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.55W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):60; Collector Current:1A; DC Current Gain Max (hfe):175; Power (Ptot):550mW
|
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