| PART |
Description |
Maker |
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| SXL-208-BLK SXL-208-TR1 SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 100/TRAY.
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13
|
Stanford Microdevices
|
| STU6N65K3 STF6N65K3 STFI6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
|
STMicroelectronics
ST Microelectronics
|
| STP6NB90FP STP6NB90 |
5.8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP POWERMESH MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
| NS471Q6 NS471B5 |
RES THNFLM NET 9M OHM/900K OHM/90K OHM/9K OHM/900 OHM/100 OH - Bulk
CNS 471 Decade Divider, Single-In-Line Through Hole Thin Film Resistor Networks (Standard)
|
Vishay Sfernice
|
| STF6N65M2 STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
|
ST Microelectronics
|
| 2SK1984-01MR |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| FQPF9N90C FQPF9N90CT FQP9N90C |
N-Channel QFETMOSFET 900V, 8A, 1.4
N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm
|
Fairchild Semiconductor
|
| STF6N80K5 STFI6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
