| PART |
Description |
Maker |
| EC2-12ND EC2-12SND EC2-24ND EC2-24SND EC2-3ND EC2- |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type 高绝缘，高击穿电压，结构紧凑，重量轻，表面安装型
Driver IC; Package/Case:24-SSOP; Supply Voltage Max:5.25V; Leaded Process Compatible:No; Operating Temp. Max:70 C; Operating Temp. Min:-10 C; Peak Reflow Compatible (260 C):No; Frequency:20GHz; Interface Type:Serial
|
TE Connectivity, Ltd.
NEC, Corp.
NEC Corp.
|
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| BY459X-1500 BY459X-1500S |
Damper diode fast, high-voltage(?诲凹浜??绠★?蹇??楂??
Damper diode fast, high-voltage(阻尼二极管，快速高 1500 V, SILICON, RECTIFIER DIODE, TO-220AC
Damper diode fast/ high-voltage
|
NXP Semiconductors N.V.
http://
PHILIPS[Philips Semiconductors]
|
| BY459-1500 BY459-1500S |
Damper diode fast/ high-voltage
Damper diode fast, high-voltage 1500 V, SILICON, RECTIFIER DIODE, TO-220AC
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BY329X1500 BY329X-1500S BY329X-1500 BY329X-1500S12 |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Damper diode fast, high-voltage
Damper diode fast/ high-voltage
Damper diodes fast, high-voltage - I<sub>FRM</sub>: 16 A; I<sub>O (AV)</sub>: 10 A; V<sub>RRM</sub>: 1500 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack
|
http://
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BY459DX-1500S BY459DX-1500 |
Damper diode fast, high-voltage 1500 V, SILICON, RECTIFIER DIODE
Damper diode fast/ high-voltage
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
http://
|
| RM200DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM400DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| NTE2558 |
Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode
|
NTE[NTE Electronics]
|
| 1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
