| PART |
Description |
Maker |
| K4R578816869A |
Direct RDRAM?Data Sheet
|
Samsung Electronic
|
| 366YYD 204YYD 526YYD 333HD/T2 333PYD/T2 333HD/HV5 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
Complete, Direct-Conversion Tuner for DVB-S2 Applications
DBS Direct Downconverter
Direct-Conversion Tuner ICs for Digital DBS Applications
Optoelectronic 光电
|
Newhaven Display International, Inc.
Air Cost Control
|
| CY2212ZC-2 CY2212ZC-2T CY2212 CY2212ZXC-2T |
Direct RambusT 82; Clock Generator (Lite)& gt;< p> Features
Direct Rambus⑩ Clock Generator (Lite)
Direct Rambus Clock Generator (Lite)
|
Cypress Semiconductor
|
| C460DA1000-0327 C460DA1000-0325 C460DA1000-0311 C4 |
Direct Attach LED Technology Rectangular LED RF Performance
LEDs
Direct Attach DA1000 LEDs
|
Cree, Inc
Marktech Corporate
|
| UPC2260 UPC2260V |
UPC2260 Data Sheet | Data Sheet[06/2000] UPC2260数据表|数据表[06/2000]
Low saturated stabilizing power circuit with a system
|
Atmel, Corp.
NEC
|
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
| PX0596 PX0598 PX0599 |
EN60 320-1 Standard Sheet C19 Class I & Standard Sheet C20 Class I Cold Condition
|
Elektron Components Ltd.
|
| EYGN0912QD6P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet
|
Panasonic
|
| SL6679TP1N SL6679KG MITELNETWORKSCORPORATION-SL667 |
Direct Conversion FSK Data Receiver
2-7V; direct conversion FSK data receiver. For pagers, including credit card, PCMCIA and watch pagers, low data rate receivers
|
Mitel Semiconductor
|
| KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC68HC11E0VB2 MC68711E20CFNE2 MC68HC11E0CFN2 MC68H |
HC11 Microcontrollers
M68HC11E Family Data Sheet
M68HC11E Family Date Sheet
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
