PART |
Description |
Maker |
EDI8L24128C12BC EDI8L24128C15BC |
12ns; 5V power supply; 128K x 24 asynchronous SRAM CMOS 15ns; 5V power supply; 128K x 24 asynchronous SRAM CMOS
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White Electronic Designs
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EDI8L32128V12AC EDI8L32128V12AI EDI8L32128V15AC ED |
12ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 15ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM 20ns; 3.3V power supply; 128K x 32 CMOS high speed static RAM
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White Electronic Designs
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WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间20ns
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White Electronic Designs Corporation
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CAT1232LPGW CAT1232LPGZ CAT1232LPGZ-T13 CAT1232LPS |
1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO16 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDIP8 5V and 3.3V Supply Voltage Monitor and Reset Circuit 5V3.3V电源电压监控和复位电 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 0.150 INCH, SOIC-8 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 GREEN, MSOP-8 Miniature, 1W Isolated Regulated DC/DC Converters 12-SOP
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ON SEMICONDUCTOR CATALYST[Catalyst Semiconductor]
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CY14E104M-ZS20XI CY14E104K-ZS25XCT CY14E104M-ZS25X |
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 45ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 45 ns, PDSO44 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54 4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
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Cypress Semiconductor, Corp.
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CY14B104K-ZSP25XI CY14B104K-ZSP15XI CY14B104M-ZSP1 |
Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II; Features: Real-Time Clock 512K X 8 NON-VOLATILE SRAM, 15 ns, PDSO44 Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 15ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 44-TSOP-II ; Features: Real-Time Clock 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44 Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: 0° to 70°C; Package: 54-TSOP-II; Features: Real-Time Clock Non-Volatile Static RAM (nvSRAM); Organization: 512x8; Density: 4MB; Speed: 25ns; Supply Voltage: 3V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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EN29LV160JB70S EN29LV160JB70SI EN29LV160JB70SIP EN |
Replaced by PTN78000W : 16兆位048K × 8 1024K x 16位)闪存引导扇区闪存,CMOS 3.0伏, Replaced by PTN78000W : 8VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers List of Unclassifed Manufac...
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24AA1025-E/P 24FC1025-E/P 24LC1025-E/P 24AA1025-E/ |
1024K I2C CMOS Serial EEPROM 1024K I2CCMOS Serial EEPROM 1024K I2C?/a> CMOS Serial EEPROM
|
Microchip Technology Inc.
|
5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM. 15ns access time. Lead finish hot gold. 512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped. 512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. 512K x 18 SRAM. 15ns access time. Lead finish factory option. 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
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Aeroflex Circuit Technology
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TX10005JASLPLNH TX1000 TX10005BASLPLNH TX10005CASL |
1000 Watt. AC/DC power supply. Output voltage 2.5V, output current 200A 1000 Watt. AC/DC power supply. Output voltage 18.0V, output current 56A 1000 Watt. AC/DC power supply. Output voltage 24.0V, output current 42A 1000 Watt. AC/DC power supply. Output voltage 28.0V, output current 36A 1000 Watt. AC/DC power supply. Output voltage 3.3V, output current 182A 1000 Watt. AC/DC power supply. Output voltage 15.0V, output current 67A 1000 Watt. AC/DC power supply. Output voltage 48.0V, output current 21A 1000 Watt. AC/DC power supply. Output voltage 36.0V, output current 28A 1000 WATT AC/DC POWER SUPPLY 1000 Watt. AC/DC power supply. Output voltage 20.0V, output current 50A
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CANDD[C&D Technologies]
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