PART |
Description |
Maker |
AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏,只有闪存
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Atmel Corp. Atmel, Corp.
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PI6C485352FAE |
2.5V/3.3V, 500 MHz Twelve 2-to-1 Differential LVPECL Clock Multiplexer
|
Pericom Semiconductor C...
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XRT75R12D XRT75R12D07 XRT75R12DIB |
TWELVE CHANNEL E3/DS3/STS-1 LINE INTERFACE UNIT WITH SONET
|
Exar Corporation
|
AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB |
Divide-By-Twelve Decade Counter 14-PDIP 0 to 70 Divide-By-Twelve Decade Counter 14-SOIC 0 to 70 Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85 Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85 4-Bit Binary Counters 14-SO 0 to 70 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85 Hex Inverters 14-SSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-TVSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-SO -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32 Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32 Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85
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Advanced Micro Devices, Inc. PROM ADVANCED MICRO DEVICES INC
|
AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM From old datasheet system 1-megabit (64K x 16) 5-volt Only Flash Memory 1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
AT29BV040A AT29BV040A-20TC AT29BV040A-20TI AT29BV0 |
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory 4M bit, 2.7-Volt Read and 2.7-Volt Write Flash
|
ATMEL[ATMEL Corporation]
|
AT49LV2048A AT49BV2048A AT49LV2048A-70TC AT49LV204 |
2M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot 2M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot 2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel
|
DS1693 DS1689 |
3-Volt/5-Volt Serialized Real Time Clock with NV RAM Control
|
Dallas
|
DS1693 |
3-Volt/5-Volt Serialized Real-Time Clock with NV RAM Control
|
TE Connectivity, Ltd.
|
DS1688 DS1688S DS1691 |
3 Volt/5 Volt Serialized Real Time Clock with NV RAM Control
|
DALLAS[Dallas Semiconducotr] MAXIM - Dallas Semiconductor
|
DS1691 DS1688 |
3 Volt/5 Volt Serialized Real-Time Clock with NV RAM Control
|
MAXIM - Dallas Semiconductor
|
28F3204W30 RD28F6408W30T85 28F320W30 28F6408W30 28 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
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INTEL[Intel Corporation]
|