PART |
Description |
Maker |
GN01022 |
Gallium Arsenide Devices
|
Panasonic
|
2SK649 |
Gallium Arsenide Devices
|
Panasonic
|
GN01061B |
Gallium Arsenide Devices
|
Panasonic
|
GN01064B |
Gallium Arsenide Devices
|
Panasonic
|
3SK0241 |
Gallium Arsenide Devices
|
Panasonic
|
OH10024 |
Gallium Arsenide Devices
|
Panasonic
|
OH10014 |
Gallium Arsenide Devices
|
Panasonic
|
OH10015 |
Gallium Arsenide Devices
|
Panasonic
|
DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
|
ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
|