| PART |
Description |
Maker |
| SBR20U60CTB |
RECTIFIER SBR DUAL 20A 60V 200A-ifsm 570mV-vf 0.5mA-ir D2PAK 50/TUBE 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
|
Diodes, Inc.
|
| 1N3174 |
Si Rectifier, 200A < I(O)/I(F) s 500A
|
New Jersey Semi-Conductor Products, Inc.
|
| 203DNQ100 203DNQ080 |
100V 200A Schottky DOUBLER Diode in a TO-244AB Non-Isolated package
80V 200A Schottky DOUBLER Diode in a TO-244AB Non-Isolated package
From old datasheet system
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| 201CMQ045 201CMQ 201CMQ035 201CMQ040 |
SCHOTTKY RECTIFIER
35V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
40V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
45V 200A Schottky Common Cathode Diode in a TO-244AB Isolated package
|
IRF[International Rectifier]
|
| 200HFR80PV 200HF 200HF120MSV 200HF120MV 200HF120PB |
From old datasheet system
STANDARD RECOVERY DIODES Stud Version
800V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
400V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
1200V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
|
IRF[International Rectifier]
|
| ST180S12P0 ST180S12P0V ST180S12P1 ST180S12P1V ST18 |
From old datasheet system
PHASE CONTROL THYRISTORS
1800V 200A Phase Control SCR in a TO-209AB (TO-93C) package
1200V 200A Phase Control SCR in a TO-209AB (TO-93) package
1600V 200A Phase Control SCR in a TO-209AB (TO-93C) package
2000V 200A Phase Control SCR in a TO-209AB (TO-93C) package
|
IRF[International Rectifier]
|
| MIT-5A116 5A116 |
MCCB, 200A, 50KA, 3P, MOTOR PROTECT; Voltage rating, AC:415V ac; Current rating:200A; Poles, No. of:3; Current, breaking capacity AC:50kA; Mounting type:DIN Rail; Length / Height, external:145mm; Width, external:90mm; Depth, RoHS Compliant: Yes
Interrupters (Optical Switch)
SLOTTED PHOTOINTERRUPTER
|
Unity Opto Technology
|
| PRHMB200A61 |
200A 600V
|
Nihon Inter Electronics Corporation
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 2MBI200S-120 |
1200V / 200A 2 in one-package
|
List of Unclassifed Manufacturers
Fuji Electric
|
| GM200HB12CT |
1200V/200A 2 IN ONE PACKAGE
|
KEC(Korea Electronics)
|
| PFT2004N |
THYRISTOR MODULE 200A / 400V
|
NIEC[Nihon Inter Electronics Corporation]
|
