| PART |
Description |
Maker |
| IPL65R070C7 |
Increased MOSFET dv/dt ruggedness
|
Infineon Technologies A...
|
| 4300.5065 4300.5064 4300.5063 4300.5062 4300.5061 |
IEC Appliance Inlet C14 with Filter, Increased Dielectric Strength
|
Schurter Inc.
|
| AS3604 |
Momentary Power Loss Detection, synchronous DCDC and increased driving capability of the LDOs
|
ams AG
austriamicrosystems AG
|
| IR-1891 |
Multiple product fixture assemblies give increased process rates
|
TE Connectivity Ltd
|
| DF1-PD2428SCFB DF1B-10S-2.5R DF1B-11S-2.5R DF1B-12 |
MOSFET N-CH 600V 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 24A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 44A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 80A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
2.5mm Pitch Connector for Discrete Wire Connection (Product Compliant with UL/CSA Standard) 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
CAT6 SOL PC PVC BLU 50FT PVC SOLID PATCH CORD
MOSFET N-CH 500V 48A SOT-227B
MOSFET N-CH 200V 180A SOT-227B
MOSFET N-CH 300V 130A SOT-227B
MOSFET N-CH 500V 64A SOT-227
MOSFET N-CH 70V 200A SOT-227B
|
http://
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| NID9N05CL NID9N05CLT4 NID9N05CLT4G |
Power MOSFET
Power MOSFET 9 Amps, 52 Volts N-Channel, Logic Level(9 A, 52V?昏??靛钩锛???????MOSFET)
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package
|
ON Semiconductor
|
| IRFP17N50LPBF |
SMPS MOSFET HEXFET?Power MOSFET
SMPS MOSFET HEXFET㈢Power MOSFET
|
International Rectifier
|
| IRL3714LPBF IRL3714PBF IRL3714SPBF |
SMPS MOSFET HEXFET?Power MOSFET
SMPS MOSFET HEXFET㈢Power MOSFET
|
http://
International Rectifier
|
