| PART |
Description |
Maker |
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| APT12080JVR |
POWER MOS V 1200V 15A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| IRG4PH40UD IRG4PH40UD-E |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 6MBI15F-120 |
IGBT(1200V 15A)
|
FUJI[Fuji Electric]
|
| RHRP15120 |
15A, 1200V Hyperfast Diode
|
Fairchild Semiconductor
|
| 6MBI15L-120 |
IGBT MODULE(1200V 15A)
|
FUJI[Fuji Electric]
|
| RURD6120S RURD6120 FN3962 |
6A, 1200V Ultrafast Diodes
From old datasheet system
6A/ 1200V Ultrafast Diodes
|
INTERSIL[Intersil Corporation]
|
| RJH1CM5DPQ-E013 |
1200V - 15A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH1CM5DPQ-E0 |
1200V - 15A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| NGTB15N120FLW |
IGBT 1200V 15A FS1 Solar/UPS
|
ON Semiconductor
|
