| PART |
Description |
Maker |
| IXTK120N25 |
High Current MegaMOS FET
|
IXYS Corporation
|
| IXTM10N100 IXTM12N100 |
MegaMOS FET 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
IXYS, Corp.
IXYS Corporation
|
| 2SK1358 |
FET Silicon N Channel MOS Type(for High Speed High Current DC-DC Converter Relay Drive and Motor Diver)
Field Effect Transistor
FET, Silicon N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver)
FET/ Silicon N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| OP17902 OP279 OP179GRTZ-REEL OP179GRTZ-REEL7 OP179 |
16V; 50mA; rail-to-rail high output current operational amplifier. For multimedia, telecom, DAA transformer driver, LCD driver, low voltage servo control, modems, FET drivers
Rail-to-Rail High Output Current Operational Amplifiers
Rail-to-Rail High Output Current Operational Amplifier; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial OP-AMP, 5000 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDSO5
Rail-to-Rail High Output Current Operational Amplifier; Package: SOIC; No of Pins: 8; Temperature Range: Industrial
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| PS7341C-1A PS7341C-1A-A PS7341CL-1A PS7341CL-1A-A |
CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET
|
NEC
|
| PS7341 PS7341-1B PS7341L-1B PS7341L-1B-E3 PS7341L- |
HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET
Optical Coupled MOS FET photocoupler(MOS 场效应管输出光光隔离器)
HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET 高隔离电引脚DIP OCMOS场效通道OCMOS场效应管
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
