| PART |
Description |
Maker |
| IXTN61N50 IXTT75N10 IXTH67N10 IXTH75N10 IXTM67N10 |
MegaMOS FET 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
High Current Power MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXTH10N100 IXTH12N100 IXTM12N100 |
Discrete MOSFETs: Standard N-channel Types
MEGAMOS FET
|
IXYS Corporation
|
| NIF62514 NIF62514T1 NIF62514T3 |
Self-protected FET, Current and Temp Limit, 42V clamp, ESD, SOT-223
Self-protected FET with Temperature and Current Limit
|
ONSEMI[ON Semiconductor]
|
| 2SK3053 2SK3053JM |
Nch power MOS FET MP-45F high-current switching
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| NIF5002N NIF5002ND NIF5002NT1 NIF5002NT3 NIF5002NT |
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223
Self-Protected FET with Temperature and Current Limit
Self-Protected FET with Temperature and Current Limit
|
ONSEMI[ON Semiconductor]
|
| MAX5069DAUE MAX5069DAUET |
High-Frequency, Current-Mode PWM Controller with Accurate Oscillator and Dual FET Drivers
|
MAXIM - Dallas Semiconductor
|
| PS7341C-1A PS7341C-1A-A PS7341CL-1A PS7341CL-1A-A |
CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET
|
NEC
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| NP32N055ILE NP32N055HLE NP32N055HLE-AZ NP32N055 NP |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
32 A, 55 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
Nch MOS FET for High-current switching
|
Cypress Semiconductor, Corp.
NEC[NEC]
|
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
