| PART |
Description |
Maker |
| 2SA1729 |
Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.
|
TY Semiconductor Co., Ltd
|
| 2SC4104 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SB1122 |
Adoption of FBET process Very small size making it easy to provide highdensity hybrid ICS
|
TY Semiconductor Co., L...
|
| 2SA1724 |
High fT (fT = 1.5GHz typ). High Current (IC = 300mA). Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SA1575 |
High fT. High breakdown voltage. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC4548 |
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.
|
TY Semiconductor Co., Ltd
|
| DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation
Intel Corp.
PROM
Intel, Corp.
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
