| PART |
Description |
Maker |
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| 2SA1580 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SB1121 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., L...
|
| 2SC5310 |
NPN Epitaxial Planar Silicon Transistors
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1575 |
High fT. High breakdown voltage. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
| 2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
| 2SC4548 |
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.
|
TY Semiconductor Co., Ltd
|
| 49LF002 SST49LF003A-33-4C-NH SST49LF003A-33-4C-WH |
MB 6C 6#20 SKT PLUG
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 384K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 256K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 512K X 8 FLASH 3V PROM, 11 ns, PQCC32
|
Silicon Storage Technology Inc
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
http://
|
| SST37VF512 |
(SST37VFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Many-Time Programmable Flash
|
Silicon Storage Technology
|
| SST39VF010-70-4I-B3K SST39VF010-70-4C-B3K SST39VF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
http://
Silicon Storage Technol...
|
