PART |
Description |
Maker |
RJK4515DPK-00T0 RJK4515DPK-12 |
450V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK4532DPD |
450V - 4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL6018DPK RJL6018DPK-15 RJL6018DPK-00T0 RJL6018DP |
600V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
APT8030 APT8030B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 27A 0.300 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET MOS Field Effect Transistor N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
PS7341 PS7341-1B PS7341L-1B PS7341L-1B-E3 PS7341L- |
HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET Optical Coupled MOS FET photocoupler(MOS 场效应管输出光光隔离器) HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET 1-ch OCMOS FET 高隔离电引脚DIP OCMOS场效通道OCMOS场效应管
|
NEC[NEC] NEC Corp. NEC, Corp.
|
AOB27S60 AOT27S60 AOTF27S60 |
600V 27A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
2SK2053 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING MOS Field Effect Transistor
|
NEC[NEC]
|
2SK2112 D11232EJ2V0DS00 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING From old datasheet system MOS Field Effect Transistor
|
NEC[NEC]
|
TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor ETC[ETC] List of Unclassifed Manufacturers
|
2SJ548 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|