| PART |
Description |
Maker |
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| PTV111-4425A-B103 PTV111-4425A-B104 PTV111-1217A-A |
Potentiometer; Resistance Max:10kohm; Resistance Tolerance: /- 20 %; Power Rating:0.05W; Voltage Rating:50 VAC, 20VDC; Series:PTV111 RESISTOR, POTENTIOMETER, CARBON FILM, 1 TURN(S), 0.05 W, 10000 ohm
11mm Potentiometer RESISTOR, POTENTIOMETER, CARBON FILM, 1 TURN(S), 0.05 W, 100000 ohm
12 mm Potentiometer
12 mm Potentiometer
|
Bourns, Inc.
Bourns Electronic Solutions
Bourns Electronic Solut...
|
| 1789-75 1789-37 1789-61 1789-43 1789-56 1789-22 17 |
Low Resistance Custom Resistor Networks with Values as Low as 0.5 ohm
|
List of Unclassifed Manufacturers
ETC
|
| 2SK1959 |
Gate can be driven by 1.5V Low ON resistance RDS(on)=3.2 MAX
|
TY Semiconductor Co., Ltd
|
| 1SS268 |
Small Total capacitance: CT = 1.2pF(Max) Low series resistance: rs = 0.6(Typ.)
|
TY Semiconductor Co., Ltd
|
| 2SK3109 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3483 |
N-Channel MOSFET
Super low on-state resistance: RDS(on)1 = 52m MAX. Low Ciss: Ciss = 2300 pF TYP.
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SK3484 |
Super low on-state resistance: RDS(on)1 = 125m MAX Low Ciss: Ciss = 900 pF TYP.
|
TY Semiconductor Co., Ltd
|
| 2SK3479 |
Super low on-state resistance: RDS(on)1 = 11 m MAX. Built-in gate protection diode
|
TY Semiconductor Co., L...
|
| 2SK3294 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| 2SK2111 |
N-Channel MOSFET
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
