PART |
Description |
Maker |
LBSS84LT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
MGSF1P02ELT1 MGSF1P02ELT3 MGSF1P02ELT1-D |
Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 Power MOSFET 750 mAmps, 20 Volts PChannel SOT23 Power MOSFET 750 mAmps, 20 Volts P-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
LBSS84LT1G LBSS84LT3G |
Power MOSFET F30 mAmps, 50 Volts
|
Leshan Radio Company
|
RF1K49221 FN4314 |
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETPower MOSFET 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET From old datasheet system 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET?Power MOSFET 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET Power MOSFET 2.5A/ 60V/ 0.130 Ohm/ ESD Rated/ Dual N-Channel LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
MMBF0202PLT1 MMBF0202PL MMBF0202PLT1-D MMBF0202PLT |
Power MOSFET 300 mAmps, 20 Volts P-Channel SOT-23
|
ON Semiconductor
|
MMBF170LT1-D |
Power MOSFET 500 mAmps, 60 Volts N-Channel SOT-23
|
ON Semiconductor
|
BSS138LT1/D BSS138LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23 Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
RF1K49092 FN3968 |
3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET From old datasheet system 3.5A/2.5A 12V 0.050/0.130 Ohm Logic Level Complementary LittleFET Power MOSFET 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
2N7002LT3 2N7002LT1 L2N7003LT1 |
Small Signal MOSFET 115 mAmps 60 Volts Small Signal MOSFET 115 mAmps/ 60 Volts Small Signal MOSFET 115 mAmps, 60 Volts 小信号MOSFET 115 mAmps0伏特
|
http:// LRC[Leshan Radio Company] Leshan Radio Company, Ltd.
|
IRHYK57133CMSE IRHYK57133CMSEPBF |
20 A, 130 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, TO-257AA, 3 PIN RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-257AA)
|
International Rectifier, Corp. Integrated Device Technology, Inc. IRF[International Rectifier]
|
STP25NM60N STW25NM60N STB25NM60N STF25NM60N STB25N |
20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 20 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 N-channel 600 V, 0.130 Ω , 21 A, MDmesh?/a> II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
|
http:// STMicroelectronics
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