| PART |
Description |
Maker |
| ZXTN19020D ZXTN19020DG ZXTN19020DGTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V NPN high gain transistor in SOT223
|
Zetex Semiconductors
Diodes Incorporated
|
| ZXTN19020CFF ZXTN19020CFFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23F, NPN high gain power transistor
|
Diodes Incorporated
|
| BC108DCSM |
Dual Bipolar NPN Devices in a hermetically sealed
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 100MA I(C) | LLCC
|
Seme LAB
|
| 2SD2118Q 2SD2097 2SD2098 2SD2118 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 10A I(C) | TO-252VAR 晶体管|晶体管|叩| 20V的五（巴西）总裁| 10A条一（c）|52VAR
|
ROHM
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| 2SB1386 2SB1412 2SB1326 A5800356 2SB1436 |
From old datasheet system
Low Frequency Transistor(-20V/-5A)
Low Frequency Transistor(-20V,-5A) 低频晶体管（- 20V的，- 5A型）
|
Rohm
Toshiba, Corp.
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| EN2555C |
Bipolar Transisitor -20V, -5A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor
-1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
| IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
