| PART |
Description |
Maker |
| BLM7G24S-30BG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G22S-60PB BLM7G22S-60PBG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-40PB BLM7G1822S-40PBG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-80AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| PTMC210124MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 12 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| MHVIC2115R2 |
MHVIC2115R2 2.2 GHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Integrated Circuit
RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA[Motorola, Inc]
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| LB421-14 |
RF POWER LDMOS TRANSISTOR
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
