PART |
Description |
Maker |
NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
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NTE Electronics, Inc. NTE[NTE Electronics]
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S40D60 S40D30 S40D40 S40D50 |
SCHOTTKY BARRIER RECTIFIERS(40A/30-60V) SCHOTTKY BARRIER RECTIFIERS(40A,30-60V) 肖特基(0A ,30 - 60V的)
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Mospec Semiconductor, Corp. MOSPEC[Mospec Semiconductor]
|
RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
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HD10 HD01 HD02 HD08 HD04 HD06 |
TRIAC-400V 25 AMP TRIAC,800V V(DRM),25A I(T)RMS,TO-220 RoHS Compliant: Yes Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Package/Case:TO-126; Current Rating:4A; Mounting Type:Through Hole Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:25mA; Package/Case:TO-220AB RoHS Compliant: Yes Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:400V; Current Rating:40A; Voltage 0.8 Amp Single Phase Glass Passivated Bridge Rectifier 100 to 1000 Volts
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Micro Commercial Components Corp. MCC[Micro Commercial Components] Micro Commercial Compon...
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BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
2N3804 2N4985 2N1650 2N2632 |
SILICON UNIDIRECTIONAL SWITCH|8.2V V(BO) MAX|300UA I(S)|TO-18 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 3A I(C) | STR-10 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 晶体管|晶体管|叩| 60V的五(巴西)总裁| 5A条一(c)|个STR - 10 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 50MA I(C) | TO-71 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 50mA的一(c)|1
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Mitsubishi Electric, Corp. Powerex, Inc.
|
FAN1117AD285X FAN1117AT33X FAN1117AS285X |
FETs - Nch 60VFETs - Nch 150VFETs - Nch 150V2.85 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PSSO2
|
FAIRCHILD SEMICONDUCTOR CORP
|
RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
126S 117S 151S 176S |
THYRISTOR/DIODE MODULE, 40A 1200VTHYRISTOR/DIODE MODULE, 40A 1200V; Voltage, Vrrm:1200V; Current, It av:40A; Case style:SEMIPACK 1; Current, It rms 3/8 (9.52mm) Sq. Wirewound Trimmers 3/8in [9.52mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Military Quality at Affordable Prices
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Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
HT1260/26OG6 |
2.6kV V[drm] Max., 1260A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
40HA40 40HA60 40HFR20 40HFR80 40HA140 40HF140 40HF |
STANDARD RECOVERY DIODES 800V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 1400V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 1000V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 1600V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 100V 40A Std. Recovery Diode in a DO-203AB (DO-5)package 1200V 40A Std. Recovery Diode in a DO-203AB (DO-5)package Trimmer Capacitor Solder Mount STANDARD RECOVERY DIODES 标准恢复二极 Trimmer Capacitor 标准恢复二极
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http:// International Rectifier, Corp.
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