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RJK0655DPB - 60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching 60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching

RJK0655DPB_8213370.PDF Datasheet


 Full text search : 60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching 60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching


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FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)

STD30NF06L STD30NF06L-1 STD30NF06LT4 N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFET
N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET POWER MOSFET
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ST Microelectronics
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International Rectifier
KBU3501-G KBU3502-G KBU3504-G KBU3506-G KBU3510-G Bridge Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=35A
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=35A
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=35A
Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=35A
Silicon Bridge Rectifiers
Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>(AV)</sub>=35A
Bridge Rectifiers, V-RRM=800V, V-DC=800V, I-(AV)=35A
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500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
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500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
   General Purpose Diodes
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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BP35-06F BP35-08F BP35-005F BP35-01F BP35-02F BP35 35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
Frontier Electronics.
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Frontier Electronics.
2SJ598 2SJ598-Z P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251 TO-252
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Won-Top Electronics Co., Ltd.
 
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