| PART |
Description |
Maker |
| 30N06G-TA3-T 30N06L-TA3-T 30N06L-TF2-T 30N06L-TF3- |
60V, 30A N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RF1S30P06SM RFP30P06 |
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
|
Fairchild Semiconductor
|
| FS5VSJ06 FS30UMJ06 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）| TO - 220AB现有
|
Powerex, Inc.
|
| 30CTQ060S 30CTQ060 30CTQ060-1 30CTQ050STRL 30CTQ05 |
60V 30A Schottky Common Cathode Diode in a D2-Pak package
50V 30A Schottky Common Cathode Diode in a TO-262 package
50V 30A Schottky Common Cathode Diode in a D2-Pak package
60V 30A Schottky Common Cathode Diode in a TO-262 package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| STD30NE06LT4 |
N - CHANNEL 60V - 0.025 ohm - 30A TO-252
N - CHANNEL 60V - 0.025 ohm - 30A TO-252
|
STMicroelectronics
|
| STD30NE06 6056 |
From old datasheet system
N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET
|
STMicroelectronics
|
| 2N6250 2N6249 2N6251 |
375V, 30A, 175W silicon N-P-N switcing transistor.
300V, 30A, 175W silicon N-P-N switcing transistor.
450V, 30A, 175W silicon N-P-N switcing transistor.
|
General Electric Solid State
|
| RFP30N06LE RF1S30N06LE RF1S30N06LESM |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs
30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
|
Fairchild Semiconductor
HARRIS[Harris Corporation]
|
| BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
| PU4120 PU4120P PU4120Q |
V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor array
(PU4120 / PU4420) SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE
|
Panasonic Semiconductor
|
| SB300-05R |
50V/ 30A Rectifier
50V, 30A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
