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RJK0651DPB - 60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching

RJK0651DPB_8213371.PDF Datasheet


 Full text search : 60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
 Product Description search : 60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching


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FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
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FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)

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Solid-State Panel Mount Relay; Output Device:IGBT; Output Voltage Max:800VDC; Control Voltage Max:28VDC; Control Voltage Min:20VDC; Load Current Max:25A; Switching:DC Switch; Capacitance:50; Control Voltage (Nominal):24
CRYDOM CORP
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TIP36A TIP36AG TIP36B TIP36BG TIP35AG TIP35CG TIP3 Complementary Silicon High?Power Transistors
Bipolar Power T0218 NPN 25A 60V; Package: SOT-93 (T0-218) 4 LEAD; No of Pins: 3; Container: Rail; Qty per Container: 30 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
Bipolar Power T0218 NPN 25A 100V ; Package: SOT-93 (T0-218) 4 LEAD; No of Pins: 3; Container: Rail; Qty per Container: 30 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-218
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ON Semiconductor
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1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 Ultra fast low capacitance diode. Working inverse voltage 50 V.
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500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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