| PART |
Description |
Maker |
| RJK1054DPB-00-J5 |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FME-220A |
Schottky Barrier Diode - 90V/100V
100V, 20A Schottky barrier diode in TO220F package
100V/ 20A Schottky barrier diode in TO220F package
100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
|
| MBR20100CT MBR20100CT-1 MBR20090CT MBR20090CT-1 MB |
SCHOTTKY RECTIFIER 肖特基整流器
From old datasheet system
RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,100V V(RRM),TO-220AB
100V 20A Schottky Common Cathode Diode in a TO-262 package
100V 20A Schottky Common Cathode Diode in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| 2N6286 |
Power 20A 100V Darlington NPN
|
ON Semiconductor
|
| S20C90 S20C100 S20C70 S20C80 |
SCHOTTKY BARRIER RECTIFIERS(20A/70-100V)
SCHOTTKY BARRIER RECTIFIERS(20A,70-100V)
|
MOSPEC[Mospec Semiconductor]
|
| RJK1028DSP-00-J5 |
100V, 3A, 165m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK1028DNS RJK1028DNS-00-J5 |
100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| SB2045 SB20100 SB2060 SB2050 |
Schottky Barrier Rectifiers Reverse Voltage 35 to 100V Forward Current 20A
|
Leshan Radio Company
|
| HSBR20100CT HSBR20150CT HSBR201X0CT |
Schottky Barrier Rectifiers (Reverse Voltage 100V to150V, Forward Current 20A)
|
Hi-Sincerity Mocroelectronics
|
| SRJ23A3BBBNN |
Rocker Switch; Circuitry:SPST-NO; Switch Operation:On-On; Contact Current Max:20A; Contact Rating:20A; Leaded Process Compatible:Yes; Mounting Type:Panel; Peak Reflow Compatible (260 C):No; Switch Function:SPST-NO
|
THE CHERRY CORP
|
