PART |
Description |
Maker |
SB30-45-25 SB30-40-258RM SB30-40-258M SB30-40-258A |
Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Anode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阳极连) 双肖特基二极管在TO258金属封装,高可靠性的应用(共阳极)(双肖特基势垒二极管(高可靠性应用,TO258金属封装,共阳极连接)) DUAL SCHOTTKY BARRIER DIODE IN TO258 METAL PACKAGE FOR HI-REL APPLICATIONS 30 A, 40 V, SILICON, RECTIFIER DIODE, TO-258AA Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Series Connection)(双肖特基势垒二极HI-REL应用,TO258金属封装,串行连接)) Dual Schottky Barrier Diode In TO258 Metal Package For HI-REL Application(Common Cathode)(双肖特基势垒二极HI-REL应用,TO258金属封装,共阴极连)
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SEMELAB LTD TT electronics Semelab, Ltd. TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
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NXPS20S100CX NXPS20S100CX-15 |
Dual power Schottky diode
|
NXP Semiconductors
|
CMFSH-3I |
SMD Schottky Diode Dual: High Current: Same Polarity DUAL, ISOLATED SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
ZUMD70-04 ZUMD70-05 |
Dual Schottky Diode-Not recommended for new designs SILICON PLANAR DUAL SCHOTTKY BARRIER DIODES
|
Zetex Semiconductors
|
HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES HSMS-2802 · Low reverse leakage Schottky diode HSMS-2803 · Low reverse leakage Schottky diode HSMS-2804 · Low reverse leakage Schottky diode HSMS-2805 · Low reverse leakage Schottky diode HSMS-2808 · Low reverse leakage Schottky diode HSMS-280B · Low reverse leakage Schottky diode HSMS-280C · Low reverse leakage Schottky diode HSMS-280E · Low reverse leakage Schottky diode HSMS-280F · Low reverse leakage Schottky diode HSMS-280K · Low reverse leakage Schottky diode HSMS-280L · Low reverse leakage Schottky diode HSMS-280M · Low reverse leakage Schottky diode HSMS-280N · Low reverse leakage Schottky diode HSMS-280R · Low reverse leakage Schottky diode
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http:// Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
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IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V) Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
80CNQ045 80CNQ035 80CNQ040 80CNQSM 80CNQ 80CNQSL 8 |
to 85C, Low Ripple & Noise, High Efficiency up to 82%, Low Profile Plastic Case, Single & Dual Ouputs SCHOTTKY RECTIFIER 45V 80A Schottky Common Cathode Diode in a D61-8-SM package 45V 80A Schottky Common Cathode Diode in a D61-8-SL package 35V 80A Schottky Common Cathode Diode in a D61-8 package 40V 80A Schottky Common Cathode Diode in a D61-8 package 45V 80A Schottky Common Cathode Diode in a D61-8 package
|
IRF[International Rectifier]
|
NTMSD3P303R2_06 NTMSD3P303R2 NTMSD3P303R2G NTMSD3P |
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
|
ONSEMI[ON Semiconductor]
|
NTMSD3P102R2-D |
FETKY P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
|
ON Semiconductor
|
NTMSD2P102LR2 |
FETKY® Power MOSFET and Schottky Diode Dual SO-8 Package(双通道SO-8封装的功率MOSFET与肖特基二极
|
ON Semiconductor
|
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|