PART |
Description |
Maker |
HC5504B HC9P5504B-5ZX96 HC-5504B HC-5504B_04 HC9P5 |
EIA/ITU PABX SLIC with 40mA Loop Feed TELECOM-SLIC, PDSO24 SLIC, EIA/ITU PABX, with 40mA Loop Feed
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
LND8925 |
60 V Led Driver, 12 Channel, 40mA
|
Linear Dimensions Semiconductor
|
PAM2811EYCR |
Linear Four-Channel Single-Wire Dimming 40mA Current Sink
|
Diodes
|
LP62S16256FU-70LLI LP62S16256FU-55LLI |
70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM 55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
LP62S16256FU-55LLT |
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
CPH6904 CPH6904-TL-E |
N-Channel JFET 25V, 20 to 40mA, 40mS, Dual CPH6
|
ON Semiconductor
|
QT300-D QT300-IS |
0.5-6.0V; 40mA; capacitance to digital converter. For fluid level sensors, prox sensors, moisture detection, position sensing, transducer driver and material sensors
|
Quantum Research Group ltd
|
MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER (MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|
FA1A4Z FA1A4ZL68 FA1A4ZL67 FA1A4ZL69 FA1A4Z-L FA1A |
Compound transistor MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-346 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
NEC Corp. ON Semiconductor
|
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
BB1 BB1A4A BB1A4M BB1L3N BB1A3M BB1F3P BB1J3P BB1L |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching Hybrid transistor
|
NEC Corp. NEC[NEC]
|