| PART |
Description |
Maker |
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| 27C512A 27C512A-12EVS 11173E 27C512A-12ISO 27C512A |
512K (64K x 8) CMOS EPROM 12k4K的8）的CMOS存储
From old datasheet system
512K (64Kx8) CMOS EPROM
|
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| 29LV800BT-70 29LV800BB-70 29LV800BB-90 29LV800BT-9 |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Macronix International Co., Ltd.
|
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44
TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36
TRANS NPN W/RES 80 HFE NS-B1
3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| W39V040FC W39V040FCP W39V040FCPZ W39V040FCQ W39V04 |
512K X 8 FLASH 3.3V PROM, 11 ns, PDSO32
512K 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
|
WINBOND ELECTRONICS CORP
|
| LE25FU406B ENA1066A LE25FU406BFN |
CMOS IC 4M-bit (512K×8) Serial Flash Memory
512K X 8 FLASH 2.7V PROM, DSO8
|
Sanyo Semicon Device
|
| W29C040T-12 W29C040T-90B W29C040T-12B W29C040P-12 |
512K X 8 CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Winbond Electronics, Corp.
|
| AS6WA5128 |
3.0V to 3.6V 512K × 8 Intelliwatt low-power CMOS SRAM(3.0V 3.6V 512K × 8 Intelliwatt 低功CMOS 静态RAM)
3.0V to 3.6V 512K 】 8 Intelliwatt low-power CMOS SRAM
3.0V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
| MX26LV800ABXBC-55G MX26LV800ABXBC-70G MX26LV800ATX |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
