| PART |
Description |
Maker |
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| 27C512A 27C512A-12EVS 11173E 27C512A-12ISO 27C512A |
512K (64K x 8) CMOS EPROM 12k4K的8）的CMOS存储
From old datasheet system
512K (64Kx8) CMOS EPROM
|
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| 29F040C-70 29F040C-90 29F040C-55 MX29F040CQI-70G M |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 4分位[12k × 8] CMOS单电5V只等于部门闪
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| NM27C040 NM27C040Q150NBSP NM27C040Q150 27C040 NM27 |
4,194,304 Bit (512K x 8) High Performance CMOS EPROM
4194304-Bit (512K x 8) High Performance CMOS EPROM
4,194,304-Bit (512K x 8) High Performance CMOS EPROM
4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM
IC-4MB CMOS OTP PROM
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| W39V040FC W39V040FCP W39V040FCPZ W39V040FCQ W39V04 |
512K X 8 FLASH 3.3V PROM, 11 ns, PDSO32
512K 】 8 CMOS FLASH MEMORY WITH FWH INTERFACE
|
WINBOND ELECTRONICS CORP
|
| W39V040C W39V040CP W39V040CQ W39V040CPZ |
512K 8 CMOS FLASH MEMORY WITH LPC INTERFACE 512K X 8 FLASH 3.3V PROM, 11 ns, PQCC32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| LE25FU406B ENA1066A LE25FU406BFN |
CMOS IC 4M-bit (512K×8) Serial Flash Memory
512K X 8 FLASH 2.7V PROM, DSO8
|
Sanyo Semicon Device
|
| W39V040AP W39V040AQ |
512K 8 CMOS FLASH MEMORY WITH LPC INTERFACE 512K X 8 FLASH 3.3V PROM, 11 ns, PDSO32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| WE512K16-XG4X WE512K16-140G4C WE512K16-140G4CA WE5 |
Access time:200 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:20150 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:150 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:140 ns; 5V power supply; 512K x 16 CMOS EEPROM module
EEPROM MCP
|
White Electronic Designs
|
| W29C040T-12 W29C040T-90B W29C040T-12B W29C040P-12 |
512K X 8 CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Winbond Electronics, Corp.
|
