| PART |
Description |
Maker |
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| ADA-4789 ADA-4789-BLKG ADA-4789-TR1G |
Silicon Bipolar Darlington Amplifier Small Signal Gain Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| LMBTA14LT1G-15 |
Darlington Amplifier Transistors
|
Leshan Radio Company
|
| MMBTA1XLT1 |
Darlington Amplifier Transistors
|
WILLAS ELECTRONIC CORP
|
| LMBTA14LT1 LMBTA13LT1 |
Darlington Amplifier Transistors 达林顿晶体管放大
|
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| NTE232 |
Silicon PNP Transistor Darlington Amplifier, Preamp
|
NTE[NTE Electronics]
|
| NTE266 |
Silicon NPN Transistor Darlington Power Amplifier
|
NTE Electronics
|
| NTE251 NTE252 |
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| MMBTA13LT1 MMBTA14LT1 ON2134 |
From old datasheet system
Darlington Amplifier Transistors(NPN Silicon)
|
http://
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola, Inc.
|
| HMC31510 315E HITTITEMICROWAVECORP-HMC315E |
GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz
|
Hittite Microwave Corporation
|
